, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. MD7002 (silicon) MD7002a MD7002b telephone: (973) 376-2922 (212)227-6005 : (973) 376-8960 npn silicon annular multiple transistors . . . designed tor use as differential amplifier;, dual general-purpose amplifiers, front end detectors and temperature compensation applications. ? excellent matching characteristics @ iq- 100/iadc ? hfel/hfe2 ' -76 (min) - MD7002a = 0.86 (min) - MD7002b ? low collector-emitter saturation voltage ? vce(bt) * 0-35 vdc (max) ? lc = 10 madc ? dc current gain specified 9 100/jadc and 10 madc ? high current-gain-bandwidth product - tt ? 260 mhz ityp) @ lc = s.o madc npn silicon multiple transistors maximum ratings rating collactor-eminar voltto* collector -b? voltagt emirar-baia voltag* coltoctor-cunini oparating and stcngi junction tamptratun rangi symbol vceo vcb veb 'c tj.t.,g total powar dinipation * ta ? 25c deratt abov* 3ec total >>ow*r oinipatlon * tc - 2sc derate abova 2sc po po vihi. 4o 60 .0 30 -?5to+200 one die 676 , 3.29 1.8 10.3 both die equal power 626 3.87 2.s 14.3 unit vdc vdc vdc madc c fflw mw^c warn thermal characteristics cherietarirtfc thermal retiftenci, junction to ambient thermal refinance, junction to can symbol rfja(l) ??jc coupling factors one die 304 87 junction 10 84 bolhlm. equal powar 380 70 junction to 44 unit c/w ?c/w * 11) r?ja ii maawnd with tha divioa loldarad into a typical printed circuit board. e seating plane style v. pin1.colle mase 3. wittf 4.0mitti jpjm ? if - a - r b - t 10 x-o l^fer ^4o too 1. emitted s. use r 7. collecto" 0 1. omitted "liiiitiu" ^l - < _jii t|?- *? 44 , ? l. w tv" j5 jtut ^ifflf g.isl jffi fc_ 0.10 isc ou.? nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
MD7002, MD7002a, MD7002b (continued) thermal coupling and effective thermal resistance in multiple chip devic?, coupling of heet between dif occurs. the junction temperature can b? calculated ? follows: hi atj,-r(1 pdi + r02k-e2?d2 where atjj is tha changs in junction tamperatura of dia 1 ho ! and r02 is the tharmal resistance of die 1 end die 2 prji and pqj is the power dissipated in dia 1 and d? 2 k?2 " the ihtrmal coupling batwkn dia 1 and dia 2 an affective package thermal raiitunca can ba defined at follows: where pot '* lna total package powar dissipation. assuming equal thermal resistance for >*ch die. equation (1) simplifies to: for the conditions where pqi * pqj " pqy =? 2 pq, equation (3) can be further simplified and by substituting into equation (21 results in: (41 re(eff>-r191 (l + k,2|/2 values for the coupling futon whan either the aw or the ambient is used as a reference are given in the table on page 1 electrical characteristics (ta - 26c unless otherwise noted.) l ctaraewiatle i 8yntbol min typ unit off characteristics collector -emitter breakdown volte* (t) (lc- tomadc. ib-o) collector -ewe breakdown voltage (ic-ioimdc, ie -01 emitter-ban breakdown voluge (ie ? iqtiadc. lc ? 01 collacior cutoff current ivcb-30vdc. ie-o) bvceo bvcbo bvebo icbo 40 50 5.0 ? - - - - - - - 100 vdc vdc vdc nadc on characteristics dc currant gain 11) (1c - loofiadc, vce - 10 vdc) (1c - 10 madc, vce - 10 vdc} collector-emitter saturation voltage (1c- 10 madc, ib* 1.0 madc) 8?se -emitter suuration voltegt he - 10 madc, ib - 1.0 madc) hfe vce(sat) vbelsatl 40 so - - 130 170 0.2 0.8 - 0.35 1.0 ~ vdc vrtc dynamic characteristics currant-g?n-b?ndwidtti product 1 1) (1c -5.0 madc, vc6 -20 vdc, f- 100 mhz) output capacitance (vcb - 10 vdc, ie - 0, f - 100 khz) input capacitance (vbe - 2.0 vdc, ic - 0, f - 100 khz) ft c0b cib 200 ? - 260 2.6 2.3 - 6.0 8.0 mhz pf pf matching characteristics dc current gain ratio (2) (1c - 1 00 vadc, vce - 1 0 vdc) md70o2a mo7003b base voltage differential (ic-100jiadc, vce-10vdc) md70o2a MD7002b "fe1/nfe2 |vbe1-vbe2l 0.75 0.85 - - - 1.0 1.0 25 15 - mvdc (1) pulea test: pulse width < 300 hi. duty cycle < 2.0*. (2) the k>wen hfe reading is taken as hfei for this ratio.
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